| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a LOCOS offset field effect transistor having a high withstanding voltage and low resistance.SOLUTION: In a LOCOS offset field effect transistor having a high withstanding voltage, by forming a first offset diffusion layer on a drain side and a second offset diffusion layer at a contact part of a high-concentration diffusion layer, and achieving low resistance and relax of an electric field at a junction part, and forming a rectangular contact in planar view at an end of a LOCOS oxide film on the high-concentration diffusion layer side, current concentration is relaxed thereby to enable the LOCOS offset field effect transistor having a high withstanding voltage and low resistance to be provided. |
