| 摘要 |
A method for determining programming parameters for programming a resistive random access memory switching from an OFF state to an ON state, the method including determining retention curves representing the increase in the ON state resistance as a function of time, for a given programming temperature and a given current limitation; determining a retention failure time for each of the retention curves; determining curves representing the decrease in the retention failure time as a function of the programming temperature, for a given current limitation; for at least one given programming temperature, determining, from the curves representing the decrease in the retention failure time, a current limiting value to be applied to the resistive random access memory in order to obtain a target retention failure time. |
