自己整合型ソース・ドレインコンタクトを有する半導体装置およびその製造方法

摘要

Replacement metal gates well suited for self-aligned contact formation are made by replacing the dummy gate with a recessed polysilicon layer and then effecting an aluminum-polysilicon substitution. The resulting upper polysilicon layer is easily removed from the recessed aluminum layer, which can then be protected with a protective dielectric layer for subsequent formation of a source or drain contact hole.