发明名称 ウェーハの面取り加工方法およびウェーハの面取り装置
摘要 PROBLEM TO BE SOLVED: To raise wafer processing accuracy by correcting the processing position of a grindstone corresponding to the feature of a wafer shape.SOLUTION: A method, in which wafer chamfering processing is performed by bringing a grindstone into contact with a peripheral edge part 1a of a wafer 1 rotated on a rotating table 2, upon processing a lot composed of plural wafers, includes: a first step for taking one wafer in the lot as a sample wafer; a second step for trial-processing the sample wafer to a sample diameter larger than a target diameter by a specified dimension and a target peripheral edge part shape E1; a third step for measuring the diameter and the peripheral edge part shape of the trial-processed sample wafer; a forth step for correcting a relative position against a rotating table of the grindstone on the basis of the measurement result of the sample wafer; and a fifth step for lot-processing the wafers in the lot including the sample wafer to the target diameter and the target peripheral edge part shape E2 by using the position-corrected grindstone.
申请公布号 JP6099960(B2) 申请公布日期 2017.03.22
申请号 JP20120275810 申请日期 2012.12.18
申请人 ダイトエレクトロン株式会社 发明人 片山 一郎
分类号 B24B49/05;B24B9/00;H01L21/304 主分类号 B24B49/05
代理机构 代理人
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