| 摘要 |
PROBLEM TO BE SOLVED: To remove remaining air bubbles at a boundary surface between an insulating substrate and an electrode pattern to ensure higher insulation performance and achieve a higher withstand voltage without a change in physical structure of a substrate and a change in encapsulation material.SOLUTION: A manufacturing method of a semiconductor device having an insulating substrate in which an electrode pattern is formed on a surface and a semiconductor element mounted on the surface of the insulating substrate comprises an encapsulation process of encapsulating at least the surface of the insulating substrate and the semiconductor element by an encapsulation material, in which an electric filed for drawing the encapsulation material to the electrode pattern is applied. |
