发明名称 ポリイミド金属張積層体
摘要 The present disclosure is directed to a circuit board having a first polyimide coverlay and a second polyimide coverlay derived from 80 to 90 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 10 to 20 mole % 4,4′-oxydiphthalic anhydride and 100 mole % 2,2′-bis(trifluoromethyl) benzidine or 100 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 20 to 90 mole % 2,2′-bis(trifluoromethyl) benzidine, and 10 to 80 mole % 4,4′-oxydianiline, a first imaged metal layer, a first electrically insulating layer, a second imaged metal layer, a polyimide bondply having a polyimide derived from 80 to 90 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 10 to 20 mole 4,4′-oxydiphthalic anhydride and 100 mole % 2,2′-bis(trifluoromethyl) benzidine, a third imaged metal layer, a second electrically insulating layer, a fourth imaged metal layer.
申请公布号 JP6100892(B2) 申请公布日期 2017.03.22
申请号 JP20150518588 申请日期 2013.06.21
申请人 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.DU PONT DE NEMOURS AND COMPANY 发明人 クリストファー デニス シモーネ;ジー.シドニー コックス
分类号 B32B15/088;B32B27/20;C08G73/10;H05K1/03 主分类号 B32B15/088
代理机构 代理人
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