发明名称 |
CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL |
摘要 |
First, there is provided a crystal growth control agent which is capable of suppressing an increase in a crystal size of a p-type semiconductor, and performing chemical modification on a surface of p-type semiconductor microparticle, a method for forming p-type semiconductor microparticles or a p-type semiconductor microparticle film by using the crystal growth control agent, a composition for forming a hole transport layer of a solar cell, and a solar cell using the composition for forming a hole transport layer. Second, there is provided a composition for forming a hole transport layer which is capable of prompting crystallization and fine pulverization of the p-type semiconductor and performing the chemical modification on the surface of the p-type semiconductor microparticle even in the case where an organic salt (an ionic liquid) containing an anion other than the thiocyanate ion is used, and a solar cell using the composition for forming a hole transport layer. According to the present invention, the crystal growth control agent contains at least one of sulfur-containing compounds (except for thiocyanate) selected from the group consisting of a compound, which generates a thiolate anion due to dissociation of a proton or a cation, and a disulfide compound, and controls crystal growth of a p-type semiconductor. |
申请公布号 |
EP3116019(A4) |
申请公布日期 |
2017.03.22 |
申请号 |
EP20150762215 |
申请日期 |
2015.03.10 |
申请人 |
Tokyo Ohka Kogyo Co., Ltd. |
发明人 |
NAKAMURA, Akimasa;YAMANOUCHI, Atsushi;ASAI, Takahiro;ISHIKAWA, Kaoru |
分类号 |
H01L21/368;H01G9/20;H01L51/46 |
主分类号 |
H01L21/368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|