Gas barrier film, method of producing a gas barrier film, and electronic device

摘要

Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon oxynitride which is formed on the first barrier layer. The water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is R1 and the water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R2, and the ratio of the water vapor transmission rate R1 to the water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less. Hereby, excellent barrier performance can be exhibited under a high-temperature and high-humidity environment.

主权项

1. A gas barrier film comprising:
a base; a first barrier layer containing silicon which is formed on at least one surface of the base; and a second barrier layer consisting of one layer containing silicon oxynitride which is formed on the first barrier layer, wherein a ratio (R1/R2) of a water vapor transmission rate R1 to a water vapor transmission rate R2 is 80 or more and 5000 or less, wherein the water vapor transmission rate R1 (g/m2/day) at 40° C. and 90% RH is 1.0 (g/m2/day)≧R1≧1.0×10−3 (g/m2/day) and is calculated based on a structure in which one barrier layer containing the first barrier layer is formed on the base, and the water vapor transmission rate R2 (g/m2/day) at 40° C. and 90% RH is 1.0×10−3 (g/m2/day)>R2≧1.0=10−5 (g/m2/day) and is calculated based on a structure in which two barrier layers containing the first barrier layer and the second barrier layer are laminated on the base.