发明名称 |
Optical signal amplification |
摘要 |
A method of optical signal amplification. Incident photons are received at a photodetector including a doped semiconductor biased by a power source. The photons generate a change in a reflective property, refractive index, or electrical conductivity of the doped semiconductor. For the change in reflective property or refractive index, a first optical signal is reflected off the photodetector to provide a reflected beam, or the photodetector includes a reverse biased semiconductor junction including the doped semiconductor within a laser resonator including a laser medium, wherein a second optical signal is emitted. For the change in electrical conductivity the photodetector includes a reversed biased semiconductor junction that is within an electrical circuit along with an electrically driven light emitting device, where a drive current provided to the light emitting device increases as the electrical conductivity of the photodetector decreases, and the light emitting device emits a third optical signal. |
申请公布号 |
US9601902(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201414307057 |
申请日期 |
2014.06.17 |
申请人 |
University of Central Florida Research Foundation, Inc.;United States of America |
发明人 |
Kar Aravinda;Manzur Tariq |
分类号 |
H01S5/00;H01S5/026;B82Y20/00;G01J1/42;H01L21/223;H01L21/268;H01L27/146;H01S5/183;H01S5/343;H01S5/42 |
主分类号 |
H01S5/00 |
代理机构 |
Jetter & Associates, P.A. |
代理人 |
Jetter & Associates, P.A. |
主权项 |
1. A method of optical signal amplification, comprising:
receiving incident photons at a first surface of a photodetector that includes at least a first doped semiconductor which is biased by a power source, wherein said incident photons are in a wavelength range which generates a change in a reflective property of said first doped semiconductor and reflecting a first optical signal off said photodetector to provide a reflected beam, or said photodetector includes a semiconductor junction including said first doped semiconductor and a second doped semiconductor, said semiconductor junction being reverse biased by said power source to provide a reversed biased semiconductor junction that is within a laser resonator including a laser medium, wherein a second optical signal is emitted from said laser resonator. |
地址 |
Orlando FL US |