发明名称 Thermoelectric device and method of manufacturing the same
摘要 A thermoelectric device and a method for manufacturing the same are provided. The thermoelectric device includes a middle substrate, electrodes, N-type thermopiles, and P-type thermopiles, in which the N-type thermopile and the P-type thermopile are electrically connected to each other by the electrodes in series. The thermoelectric device includes further includes an upper substrate bonded to an upper surface of the middle substrate and a lower substrate bonded to a lower surface of the substrate, such that a temperature difference is provided between opposite sides of each of the N-type thermopiles and the P-type thermopiles.
申请公布号 US9601678(B2) 申请公布日期 2017.03.21
申请号 US201113098831 申请日期 2011.05.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Cho Jin-woo
分类号 H01L35/32;H01L35/34 主分类号 H01L35/32
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A thermoelectric device comprising: a middle substrate comprising a single layer; a plurality of N-type thermopiles and P-type thermopiles disposed on a first surface of the single layer of the middle substrate, wherein the N-type thermopiles and the P-type thermopiles are alternately arranged and are electrically connected to each other in series; a first substrate that is thermally bonded to the first surface of the single layer of the middle substrate, such that the first substrate is directly thermally bonded to a region of the single layer of the middle substrate at a first side of each of the plurality of N-type thermopiles and to a region of the single layer of the middle substrate at a first side of each of the plurality of P-type thermopiles, and wherein the first substrate is not in physical contact with any of the plurality of N-type thermopiles and is not in physical contact with any of the plurality of P-type thermopiles and a second substrate that is thermally bonded to a second surface of the single layer of the middle substrate, such that the second substrate is directly thermally bonded to a region of the single layer of the middle substrate at a second side, opposite the first side, of each of the N-type thermopiles and to a region of the single layer of the middle substrate at a second side, opposite the first side, of each of the P-type thermopiles, and wherein the second substrate is not in physical contact with any of the plurality of N-type thermopiles and is not in physical contact with any of the plurality of P-type thermopiles.
地址 Suwon-si KR
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