Method for fabricating semiconductor device

摘要

A method for fabricating a semiconductor device includes: forming isolation layers and active regions in a substrate, wherein each of the active regions is formed between the isolation layers; forming a silicide layer in each of the active regions; forming trenches and silicide layer patterns simultaneously by etching the silicide layer and each of the active regions, wherein each of the trenches is located between the silicide layer patterns; forming a buried gate in each of the trenches; forming an inter-layer dielectric layer that covers the buried gate and the silicide layer patterns; and forming a first opening that exposes one silicide layer pattern among the silicide layer patterns by selectively etching the inter-layer dielectric layer, wherein the silicide layer patterns are formed before the buried gate is formed.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming isolation layers and active regions in a substrate, wherein each of the active regions is formed between the isolation layers; forming a silicide layer in each of the active regions; forming trenches and silicide layer patterns simultaneously by etching the silicide layer in each of the active regions, wherein each of the trenches is located between the silicide layer patterns; forming a buried gate in each of the trenches; forming an inter-layer dielectric layer that covers the buried gate and the silicide layer patterns; and forming a first opening that exposes one silicide layer pattern among the silicide layer patterns by selectively etching the inter-layer dielectric layer, wherein the silicide layer patterns are formed before the buried gate is formed.