| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device according to an embodiment of the invention includes a pipe channel layer including a first portion and a second portion protruding from the first portion, first channel pillars protruding from the second portion of the pipe channel layer, and second channel pillars protruding from the first portion of the pipe channel layer. | ||
| 申请公布号 | US9601504(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201414493446 | 申请日期 | 2014.09.23 |
| 申请人 | SK hynix Inc. | 发明人 | Lee Hyun Ho;Shin Ji Hye |
| 分类号 | H01L29/76;H01L27/115 | 主分类号 | H01L29/76 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor device, comprising: a pipe channel layer including a first portion and a second portion protruding upwardly from a center area of the first portion so that a center area of the pipe channel layer is thicker than both sides of the pipe channel layer; first channel pillars protruding from the second portion of the pipe channel layer; and second channel pillars protruding from the first portion of the pipe channel layer, wherein a stepwise surface of the pipe channel layer is defined between an outside surface of the first portion and an outside surface of the second portion. | ||
| 地址 | Icheon-si KR | ||