| 发明名称 | Low temperature adhesive resins for wafer bonding | ||
| 摘要 | A method for adhesive bonding in microelectronic device processing is provided that includes bonding a handling wafer to a front side of a device wafer with an adhesive comprising phenoxy resin; and thinning the device wafer from the backside of the device wafer while the device wafer is adhesively engaged to the handling wafer. After the device wafer has been thinned, the adhesive comprising phenoxy resin may be removed by laser debonding, wherein the device wafer is separated from the handling wafer. | ||
| 申请公布号 | US9601364(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201615077113 | 申请日期 | 2016.03.22 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Allen Robert D.;Andry Paul S.;Gelorme Jeffrey D.;Hung Li-wen;Knickerbocker John U.;Tsang Cornelia K. |
| 分类号 | H01L21/00;H01L23/34;H01L21/683;H01L25/03;H01L21/762;H01L23/00;H01L21/463;H01L21/306;H01L21/304;H01L21/768 | 主分类号 | H01L21/00 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Percello Louis J. |
| 主权项 | 1. A method for forming a semiconductor device comprising: forming at least one semiconductor device on the front surface of a device wafer; bonding a handling wafer to a front surface of the device wafer with phenoxy resin; thinning the device wafer from the backside of the device wafer; removing the adhesive comprising phenoxy by laser debonding with an excimer laser; and forming interconnects to the at least one semiconductor device extending through a back side surface of the device wafer. | ||
| 地址 | Armonk NY US | ||