Methods of forming metal source/drain contact structures for semiconductor devices with gate all around channel structures

摘要

In one example, the method disclosed herein includes, among other things, forming a sacrificial structure around a plurality of stacked substantially un-doped nanowires at a location that corresponds to the channel region of the device, performing a selective etching process through a cavity to remove a second plurality of nanowires from the channel region and the source/drain regions of the device while leaving a first plurality of nanowires in position, and forming a metal conductive source/drain contact structure in each of the source/drain regions, wherein each of the metal conductive source/drain contact structures is positioned all around the first plurality of nanowires positioned in the source/drain regions.

主权项

1. A method of forming a nanowire device comprising multiple nanowires, a channel region and a plurality of source/drain regions, the method comprising:
forming a plurality of stacked substantially un-doped nanowire structures above a semiconductor substrate, said plurality of stacked substantially un-doped nanowire structures comprising a first plurality of nanowires made of a first semiconductor material and a second plurality of nanowires made of a second semiconductor material that is different than said first semiconductor material; forming a sacrificial structure around said plurality of stacked substantially un-doped nanowire structures at a location that corresponds to said channel region of said device; forming a layer of insulating material above and adjacent said plurality of stacked substantially un-doped nanowire structures and proximate said sacrificial structure; removing said sacrificial structure to define a cavity that exposes said plurality of stacked substantially un-doped nanowire structures within said cavity; performing a selective etching process through said cavity to remove said second plurality of nanowires from said channel region and said source/drain regions of said device while leaving said first plurality of nanowires in position; forming a metal conductive source/drain contact structure in each of said source drain regions, wherein each of said metal conductive source/drain contact structures is positioned all around said first plurality of nanowires positioned in said source/drain region; and forming a gate all around gate structure that is positioned all around each of said first plurality of nanowires positioned in said channel region of said device.