Semiconductor device having sacrificial layer pattern with concave sidewalls and method fabricating the same

摘要

In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.

主权项

1. A semiconductor device, comprising:
a first conductive line; a second conductive line formed at substantially the same height from a substrate as the first conductive line, wherein the first and second conductive lines are spaced apart from each other; and a first sacrificial layer pattern disposed between the first and second conductive lines and formed at substantially the same height from the substrate as the first and second conductive lines, wherein the first sacrificial layer pattern has at least one concave sidewall.