Processes for fabricating FinFET structures with semiconductor compound portions formed in cavities and extending over sidewall spacers

摘要

A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fin together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.

主权项

1. A process for fabricating a fin-type field effect transistor (FinFET) structure, comprising:
patterning a semiconductor substrate to form a plurality of fins; forming a gate dielectric layer on surfaces of the fins; trimming the gate dielectric layer to reduce a thickness thereof, wherein the trimmed gate dielectric layer completely covers a top surface of each fin; and forming a spacer material layer on the trimmed gate dielectric layer.