Aspect ratio for semiconductor on insulator

摘要

A method comprises forming one or more fins in a first region on an insulated substrate. The method also comprises forming one or more fins formed in a second region on the insulated substrate. The insulated substrate comprising a silicon substrate, and an insulator layer deposited on the silicon substrate. The one or more fins in the first region comprising a first material layer deposited on the insulator layer. The one or more fins in the second region comprising a second material layer deposited on the insulator layer.

主权项

1. A method, comprising:
forming a first set of one or more fins in a first region from an insulated substrate and a second set of one or more fins in a second region from the insulated substrate, the first region comprising a first material layer and the second region comprising a second material layer; wherein the insulated substrate comprises:
a silicon substrate; andan insulator layer deposited on the silicon substrate; and wherein forming the first set of one or more fins and the second set of one or more fins comprises:
depositing the second material layer on the insulator layer;depositing a first hard mask (HM) on the second material layer;etching the first region to remove the first layer and the insulator layer from the first region, and recessing the silicon substrate to a first depth;depositing an oxide layer on the silicon substrate in the first region; andplanarizing the oxide layer to the first HM in the second region.