发明名称 P-N junction optoelectronic device for ionizing dopants by field effect
摘要 An optoelectronic device comprising a mesa structure including: a first and a second semiconductor portions forming a p-n junction,a first electrode electrically connected to the first portion which is arranged between the second portion and the first electrode,the device further comprising:a second electrode electrically connected to the second portion,an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions,upper faces of the first electrode and of the second electrode form a substantially planar continuous surface.
申请公布号 US9601542(B2) 申请公布日期 2017.03.21
申请号 US201514750156 申请日期 2015.06.25
申请人 Commissariat à l'énergie atomique et aux énergies alternatives 发明人 Robin Ivan-Christophe;Bono Hubert
分类号 H01L27/15;H01L33/38;H01L31/18;H01L31/0352;H01L31/0224;H01L27/144;H01L33/00;H01L31/113;H01L31/10 主分类号 H01L27/15
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. An optoelectronic device having at least one mesa structure including at least: a first and a second semiconductor portions, one being p-doped and the other being n-doped, and forming together a p-n junction, a first electrode electrically connected to the first semiconductor portion which is arranged between the second semiconductor portion and the first electrode, the optoelectronic device further comprising at least: a second electrode electrically connected to the second semiconductor portion, an element electrically insulated from the first semiconductor portion and the second semiconductor portion, and which is able to ionize dopants of at least one of the first and second semiconductor portions through generating an electric field in the at least one of the first and second semiconductor portions and which overlays at least one part of the side flanks of at least one part of the at least one of the first and second semiconductor portions and of at least one part of a space charge zone formed by the first and second semiconductor portions, and wherein upper faces of at least the first electrode and of the second electrode form a substantially planar continuous surface.
地址 Paris FR