Two-terminal nanotube devices and systems and methods of making same

摘要

A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.

主权项

1. A two terminal non-volatile nanotube memory device, comprising:
a first conductive terminal, said first conductive terminal having a first sidewall; a second conductive terminal, said second conductive terminal having a second sidewall; a nanotube fabric in permanent electrical communication with said first sidewall and said second sidewall, said nanotube fabric comprising a plurality of nanotube elements that provide at least one electrically modifiable conductive pathway through said nanotube fabric between said first conductive terminal and said second conductive terminal; an insulating element disposed between said first conductive terminal and said second conductive terminal; and a control circuitry in electrical communication with at least one of said first conductive terminal and said second conductive terminal; wherein said control circuitry is configured to apply a first voltage difference between said first conductive terminal and said second conductive terminal so as to change the resistance of said nanotube fabric from a relatively low resistance to a relatively high resistance; wherein said control circuitry is configured to apply a second voltage difference between said first conductive terminal and said second conductive terminal so as to change the resistance of said nanotube fabric from a relatively high resistance to a relatively low resistance; wherein said nanotube fabric is capable of being repeatedly adjusted among at least a relatively high resistance and a relatively low resistance, responsive to an electrical stimulus applied between said first conductive terminal and said second conductive terminal to modify at least one of said at least one electrically modifiable conductive pathway through said nanotube fabric.