发明名称 |
Semiconductor device and method of manufacturing a semiconductor device having a glass piece and a single-crystalline semiconductor portion |
摘要 |
A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. The glass piece has a portion extending along and in direct contact with the edge surface of the single-crystalline semiconductor portion. |
申请公布号 |
US9601376(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201514960505 |
申请日期 |
2015.12.07 |
申请人 |
Infineon Technologies AG |
发明人 |
Breymesser Alexander;Brockmeier Andre;Santos Rodriguez Francisco Javier;Schulze Hans-Joachim;von Koblinski Carsten;Schmidt Gerhard |
分类号 |
H01L29/66;H01L21/78;H01L23/31;H01L21/20;H01L23/00;H01L29/739;H01L29/78;H01L29/861;H01L21/56;H01L21/762 |
主分类号 |
H01L29/66 |
代理机构 |
Murphy, Bilak & Homiller, PLLC |
代理人 |
Murphy, Bilak & Homiller, PLLC |
主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming semiconductor elements in semiconductor portions of a semiconductor substrate, forming a cavity in a working surface of the semiconductor substrate, wherein the cavity forms a grid separating the semiconductor portions comprising the semiconductor elements; arranging a glass material in contact with the working surface of the substrate, wherein the glass material comprises at least one of a powder, glass frits and pellets or is a glass disk; pressing the glass material and the semiconductor substrate against each other, wherein a temperature of the glass material and a force exerted on the glass material are controlled such that fluidified glass material flows into the cavity; controlling the temperature and the force to re-solidify the fluidified glass material, the re-solidified glass material forming a glass piece with a protrusion extending into the cavity, wherein the glass piece is in-situ bonded to the semiconductor substrate; and separating the semiconductor substrate along the cavity to obtain a plurality of semiconductor dies from the semiconductor substrate such that the glass material forms glass frames encompassing the semiconductor dies. |
地址 |
Neubiberg DE |