发明名称 |
Semiconductor memory device, memory system including the same and operating method thereof |
摘要 |
A semiconductor memory device includes a program and read unit suitable for programming program data in a memory cell array and for reading read data stored in the memory cell array, and a control unit suitable for generating a control signal for controlling the program and read unit in response to a command input from the outside of the semiconductor memory device, in which the control unit controls the program and read unit to read the read data in a state of storing a first bit data of the program data when a read command is input while programming the program data. |
申请公布号 |
US9601169(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201314082941 |
申请日期 |
2013.11.18 |
申请人 |
SK Hynix Inc. |
发明人 |
Hong Min Gi;Park Jin Su |
分类号 |
G11C7/06;G11C7/10;G11C7/22 |
主分类号 |
G11C7/06 |
代理机构 |
I P & T Group LLP |
代理人 |
I P & T Group LLP |
主权项 |
1. A semiconductor memory device, comprising:
a program and read unit temporarily storing program data including a first bit data and a second bit data, programming the program data temporarily stored in a memory cell array, or reading data stored in the memory cell array; and a control unit suitable for generating a control signal for controlling the program and read unit in response to a command input from the outside of the semiconductor memory device, wherein the control unit controls the program and read unit to stop programming the program data when a read command is input while programming the program data, and perform a read operation while maintaining the first bit data stored when programming the program data. |
地址 |
Gyeonggi-do KR |