Array structure of single-ploy nonvolatile memory

摘要

An array structure of a single-poly nonvolatile memory includes a first MTP section and a first OTP section. The first MTP section includes a plurality of MTP cells and the first OTP section includes a plurality of OTP cells. The first MTP is connected to a first word line, a first source line, a first erase line and a plurality of bit lines. The first OTP section is connected to a second word line, a second source line and the plurality of bit lines shared with the first MTP section.

主权项

1. An array structure of a single-poly nonvolatile memory, the array structure comprising:
a first word line; a second word line; a first source line; a second source line; a first erase line; a first bit line; a second bit line; a first MTP cell comprising a first PMOS transistor, a second PMOS transistor and a first NMOS transistor, wherein a source terminal of the first PMOS transistor is connected to the first source line, a gate terminal of the first PMOS transistor is connected to the first word line, a drain terminal of the first PMOS transistor is connected to a source terminal of the second PMOS transistor, a drain terminal of the second PMOS transistor is connected to the first bit line, a gate terminal of the second PMOS transistor is connected to a gate terminal of the first NMOS transistor, and a drain terminal and a source terminal of the first NMOS transistor are connected to the first erase line; and a first OTP cell comprising a third PMOS transistor and a fourth PMOS transistor, wherein a source terminal of the third PMOS transistor is connected to the second source line, a gate terminal of the third PMOS transistor is connected to the second word line, a drain terminal of the third PMOS transistor is connected to a source terminal of the fourth PMOS transistor, a drain terminal of the fourth PMOS transistor is connected to the second bit line, and a gate terminal of the fourth PMOS transistor is a floating state.