发明名称 Ultra fast semiconductor laser
摘要 A laser system includes first and second mirrors, a semiconductor laser and a high frequency pulse generator. The semiconductor laser generates optical power within an optical cavity and reflects the optical power between the first mirror and second mirrors. The optical power has a frequency of foriginal-laser. The high frequency pulse generator generates a high frequency pulse with a rise time greater than an optical cycle of the optical power within the optical cavity and directly impinges the high frequency pulse on the optical power within the optical cavity. Impinging the high frequency pulse on the optical power within the optical cavity causes a frequency shift of the optical power to generate a final laser frequency that is greater than foriginal-laser as well as beyond a frequency band of the second mirror to cause a final laser to be emitted past the second mirror and from the semiconductor laser.
申请公布号 US9601895(B2) 申请公布日期 2017.03.21
申请号 US201414653525 申请日期 2014.10.17
申请人 BAE Systems Information and Electronic Systems Integration Inc. 发明人 Mandelbaum Idan;Papadopoulos Konstantinos
分类号 H01S3/10;H01S3/094;H01S5/06;H01S3/106;H01S5/0625;H01S5/125;H01S5/34;H01S5/02;H01S5/12 主分类号 H01S3/10
代理机构 Sand & Sebolt, LPA 代理人 Long Daniel J.;Sand & Sebolt, LPA
主权项 1. A laser system comprising: a first mirror and a second mirror; a semiconductor laser configured to generate an optical power within an optical cavity and to reflect the optical power between the first mirror and the second mirror, wherein the optical power has a frequency of foriginal-laser; a high frequency pulse generator configured to generate a high frequency pulse with a rise time greater than an optical cycle generated by the high frequency pulse generator and to directly impinge the high frequency pulse onto the optical power within the optical cavity, wherein impinging the high frequency pulse on the optical power within the optical cavity causes a frequency shift of the optical power in the optical cavity to generate a final laser frequency that is greater than foriginal-laser as well as beyond a frequency band of the second mirror to cause a final laser to be emitted past the second mirror and from the semiconductor laser.
地址 Nashua NH US