Method of producing group III nitride semiconductor light-emitting device

摘要

To provide a Group III nitride semiconductor light-emitting device production method, which is intended to grow a flat light-emitting layer without reducing the In concentration of the light-emitting layer. The method of the techniques includes an n-side superlattice layer formation step, in which an InGaN layer, a GaN layer disposed on the InGaN layer, and an n-type GaN layer disposed on the GaN layer are repeatedly formed. In formation of the InGaN layer, nitrogen gas is supplied as a carrier gas. In formation of the n-type GaN layer, a first mixed gas formed of nitrogen gas and hydrogen gas is supplied as a carrier gas. The first mixed gas has a hydrogen gas ratio by volume greater than 0% to 75% or less.

主权项

1. A method for producing a Group III nitride semiconductor light-emitting device, the method comprising:
(a) forming an n-type semiconductor layer on a substrate; (b) forming a light-emitting layer on the n-type semiconductor layer; and (c) forming a p-type semiconductor layer on the light-emitting layer, wherein the step (a) includes forming an n-side superlattice layer, in the formation of the n-side superlattice layer, at least an InGaN layer, a first semiconductor layer on the InGaN layer, and a second semiconductor layer on the first semiconductor layer are formed by repeating a plurality of times, in the formation of the InGaN layer, nitrogen gas and not hydrogen gas is supplied as a carrier gas, in the formation of the first semiconductor layer, nitrogen gas and not hydrogen gas is supplied as a carrier gas, in the formation of the second semiconductor layer, a first mixed gas formed of nitrogen gas and hydrogen gas is supplied as a carrier gas, the ratio by volume of hydrogen gas in the first mixed gas is greater than 0% and 75% or less, and in the formation of the light-emitting layer, nitrogen gas and not hydrogen gas is supplied as a carrier gas.