发明名称 |
Organic light emitting diode display device |
摘要 |
An organic light emitting diode display device includes a semiconductor on a substrate with a driving channel, an auxiliary storage electrode on the substrate with a storage electrode formed of a same material as the semiconductor and separated therefrom, a first insulating layer covering the semiconductor and the auxiliary storage electrode, a driving gate electrode overlapping the auxiliary storage electrode to define an auxiliary storage capacitor, a second insulating layer covering the driving gate electrode and the first insulating layer, a main storage electrode overlapping the driving gate electrode to define a main storage capacitor, a passivation layer covering the data wire and the second insulating layer, a pixel electrode on the passivation layer, an organic emission layer on the pixel electrode, and a common electrode on the organic emission layer. |
申请公布号 |
US9601561(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201514925061 |
申请日期 |
2015.10.28 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Jin Guang Hai;Kim Yong Joo;Lee Min Hyeng |
分类号 |
H01L27/15;H01L31/12;H01L33/00;H01L27/32 |
主分类号 |
H01L27/15 |
代理机构 |
Lee & Morse P.C. |
代理人 |
Lee & Morse P.C. |
主权项 |
1. An organic light emitting diode display device, comprising:
an insulation substrate; a semiconductor on the insulation substrate, the semiconductor including a driving channel having at least one portion; an auxiliary storage electrode on the insulation substrate, the auxiliary storage electrode being formed of a same material as that of the semiconductor and being separated from the semiconductor; a first insulating layer covering the semiconductor and the auxiliary storage electrode; a gate wire on the first insulating layer, the gate wire including a driving gate electrode overlapping the driving channel of the semiconductor and the auxiliary storage electrode, the auxiliary storage electrode with the driving gate electrode defining an auxiliary storage capacitor; a second insulating layer covering the gate wire and the first insulating layer; a data wire on the second insulating layer, the data wire including a vertical driving voltage line and a main storage electrode, and the main storage electrode overlapping the driving gate electrode of the gate wire to define a main storage capacitor; a passivation layer covering the data wire and the second insulating layer; a pixel electrode on the passivation layer; an organic emission layer on the pixel electrode; and a common electrode disposed on the organic emission layer. |
地址 |
Yongin-si, Gyeonggi-do KR |