发明名称 Solid state image sensor, method of manufacturing solid state image sensor, and image capturing system
摘要 The present invention provides a solid state image sensor including a pixel array having a plurality of pixels arranged therein, each of the plurality of pixels including a photoelectric conversion device and a microlens configured to guide incident light to the photoelectric conversion device, the microlens having a lower surface, on an exit side of the incident light, which has a convex shape with respect to the photoelectric conversion device, with a vertex of the convex shape shifting from a center position of the microlens to a central side of the pixel array.
申请公布号 US9601534(B2) 申请公布日期 2017.03.21
申请号 US201615010340 申请日期 2016.01.29
申请人 CANON KABUSHIKI KAISHA 发明人 Sekine Yasuhiro
分类号 H01L31/0232;H01L27/146 主分类号 H01L31/0232
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A solid state image sensor comprising a pixel array having a plurality of pixels, each of the plurality of pixels including a photoelectric conversion device and a microlens configured to guide incident light to the photoelectric conversion device, the microlens having a lower surface, on an exit side of the incident light, which has a convex shape with respect to the photoelectric conversion device, wherein a vertex of the convex shape is closer to a first end portion of the microlens than to a second end portion of the microlens along a direction toward a central side of the pixel array, and wherein the first end portion is closer to the central side of the pixel array than the second end portion along the direction toward the central side of the pixel array.
地址 Tokyo JP