Gate-all-around semiconductor device and method of fabricating the same

摘要

The disclosed technology generally relates to semiconductor devices and more particularly to a gate-all-around semiconductor device, and methods of fabricating the same. In one aspect, the method comprises providing on a semiconductor substrate between STI regions at least one suspended nanostructure anchored by a source region and a drain region. The suspended nanostructure is formed of a crystalline semiconductor material that is different from a crystalline semiconductor material of the semiconductor substrate. A gate stack surrounds the at least one suspended nanostructure.

主权项

1. A semiconductor device comprising:
a semiconductor substrate comprising a crystalline semiconductor material; at least one suspended nanostructure extending in a first direction and formed at least partially above and between a pair of adjacent STI regions, the at least one suspended nanostructure being electrically connected to and mechanically supported by a source region and a drain region formed at opposite ends of the at least one suspended nanostructure in the first direction, wherein the at least one suspended nanostructure comprises a crystalline semiconductor material that is different from the crystalline semiconductor material of the semiconductor substrate; a cavity formed vertically between the at least one suspended nanostructure and the semiconductor substrate and laterally between sidewalls of the STI regions facing each other; and a gate stack surrounding the suspended nanostructure, wherein the gate stack extends to cover a top surface and the sidewalls of the STI regions and an exposed surface of the semiconductor substrate in the cavity.