Semiconductor device and method of forming UBM structure on back surface of TSV semiconductor wafer

摘要

A semiconductor device has a plurality of conductive vias formed through the semiconductor die with a first insulating layer around the conductive vias. A recess is formed in the first insulating layer around the conductive vias by LDA. A portion of the semiconductor wafer is removed by LDA after forming the recess in the first insulating layer so that the conductive vias extend above a surface of the semiconductor wafer. The first insulating layer extends to the surface of the semiconductor wafer or above the surface of the semiconductor wafer. A second insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the second insulating layer is removed by LDA, while leaving a second portion of the second insulating layer over the surface of the semiconductor wafer around the conductive vias. An electroless plated bump is formed over the conductive vias.

主权项

1. A semiconductor device, comprising:
a semiconductor die; a conductive via formed through the semiconductor die; a first insulating layer formed around the conductive via and extending beyond a first surface of the semiconductor die; a second insulating layer formed in direct contact with the first surface of the semiconductor die and extending over a portion of the first insulating layer which extends beyond the first surface of the semiconductor die to contact the conductive via, wherein a first end of the conductive via extends beyond the first insulating layer and second insulating layer, and the second insulating layer includes a first thickness over the portion of the first insulating layer and a second thickness greater than the first thickness over the first surface of the semiconductor die; and a first bump formed in contact with the first end of the conductive via and a side surface of the conductive via.