Semiconductor device and method of forming inverted pyramid cavity semiconductor package

摘要

A semiconductor device has a first substrate. A conductive layer is formed over the first substrate. A first cavity is formed through the first substrate and extending to the conductive layer. A first semiconductor die including a plurality of first interconnect structures is disposed in the first cavity. A second substrate is disposed over the first substrate. A second cavity is formed through second substrate. A second semiconductor die including a plurality of second interconnect structures is disposed in the second cavity. A discrete device or third semiconductor die is disposed over the second semiconductor die. A plurality of third interconnect structures is formed between the second substrate and discrete device or third semiconductor die. The first, second, and third interconnect structures are reflowed simultaneously. An encapsulant is deposited over and around the first semiconductor die, the second semiconductor die, and the discrete device or third semiconductor die.

主权项

1. A method of making a semiconductor device, comprising:
providing a first substrate; forming an interconnect structure over the substrate; forming a first cavity in the first substrate over the interconnect structure; disposing a first semiconductor die in the first cavity on the interconnect structure; providing a second substrate; forming a second cavity through the second substrate; disposing the second substrate over the first substrate; disposing a second semiconductor die in the second cavity over the first cavity and extending outside a footprint of the first cavity; and depositing an encapsulant over the first semiconductor die and second semiconductor die.