发明名称 |
Reflective lithography masks and systems and methods |
摘要 |
Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed. |
申请公布号 |
US9599888(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201615014699 |
申请日期 |
2016.02.03 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Chien-Hsuan;Wang Jen-Pan |
分类号 |
G03F1/52;G03F1/76;G03F1/24;G03F7/20 |
主分类号 |
G03F1/52 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A method of forming a photomask, the method comprising:
forming a first reflective material on a convex surface of a transparent substrate; forming a patterned mask layer on a concave surface of the transparent substrate, the patterned mask layer having openings; forming a reticle pattern within the openings of the patterned mask layer, the reticle pattern comprising a second reflective material; and removing the patterned mask layer. |
地址 |
Hsin-Chu TW |