发明名称 Reflective lithography masks and systems and methods
摘要 Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
申请公布号 US9599888(B2) 申请公布日期 2017.03.21
申请号 US201615014699 申请日期 2016.02.03
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Liu Chien-Hsuan;Wang Jen-Pan
分类号 G03F1/52;G03F1/76;G03F1/24;G03F7/20 主分类号 G03F1/52
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method of forming a photomask, the method comprising: forming a first reflective material on a convex surface of a transparent substrate; forming a patterned mask layer on a concave surface of the transparent substrate, the patterned mask layer having openings; forming a reticle pattern within the openings of the patterned mask layer, the reticle pattern comprising a second reflective material; and removing the patterned mask layer.
地址 Hsin-Chu TW