| 发明名称 | Semiconductor device | ||
| 摘要 | A p-type anode layer (2) is provided on an upper surface of an n-type drift layer (1). An n-type cathode layer (3) is provided on a lower surface of the n−-type drift layer (1). An n-type buffer layer (4) is provided between the n−-type drift layer (1) and the n-type cathode layer (3). A peak impurity concentration in the n-type buffer layer (4) is higher than that in the n−-type drift layer (1) and lower than that in the n-type cathode layer (3). A gradient of carrier concentration at a connection between the n−-type drift layer (1) and the n-type buffer layer (4) is 20 to 2000 cm−4. | ||
| 申请公布号 | US9601639(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201314784170 | 申请日期 | 2013.06.12 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Masuoka Fumihito;Nakamura Katsumi;Nishii Akito |
| 分类号 | H01L29/00;H01L29/872;H01L29/36;H01L29/739;H01L29/06;H01L29/417;H01L29/861;H01L29/868;H01L29/16;H01L29/20 | 主分类号 | H01L29/00 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A semiconductor device comprising: an n-type drift layer; a p-type anode layer provided on an upper surface of the n-type drift layer; a cathode layer provided on a lower surface of the n-type drift layer; and an n-type buffer layer provided between the n-type drift layer and the cathode layer, wherein a peak impurity concentration in the n-type buffer layer is higher than that in the n-type drift layer and lower than that in the cathode layer, and a gradient of carrier concentration at a connection between the n-type drift layer and the n-type buffer layer is 20 to 2000 cm−4. | ||
| 地址 | Tokyo JP | ||