Composite semiconductor device with different channel widths

摘要

A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures has a lower resistance in a saturation region of operation than each transistor structure of the second plurality of transistor structures.

主权项

1. A device comprising:
a semiconductor substrate; a first constituent transistor comprising a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another; and a second constituent transistor comprising a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another; wherein the first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another; wherein each transistor structure of the first and second pluralities of transistor structures comprises a plurality of source regions and a plurality of body contact regions disposed in an alternating arrangement with the plurality of source regions along a lateral dimension of the device; and wherein each transistor structure of the first plurality of transistor structures has a lower resistance in a saturation region of operation than each transistor structure of the second plurality of transistor structures due to a layout difference in the alternating arrangement between the first and second pluralities of transistor structures.