| 发明名称 | Semiconductor device and method for producing the same | ||
| 摘要 | A semiconductor device of an embodiment includes a p-type SiC layer; a SiC region provided on the p-type SiC layer and containing H (hydrogen) or D (deuterium) in an amount of 1×1018 cm−3 or more and 1×1022 cm−3 or less; and a metal layer provided on the SiC region. | ||
| 申请公布号 | US9601581(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201514641775 | 申请日期 | 2015.03.09 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Shimizu Tatsuo;Shinohe Takashi |
| 分类号 | H01L29/16;H01L21/265;H01L21/283;H01L21/04;H01L21/30;H01L21/324;H01L29/45;H01L29/78;H01L29/66;H01L29/06;H01L29/10 | 主分类号 | H01L29/16 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a p-type SiC layer; a first SiC region provided directly on the p-type SiC layer, the first SiC region containing H (hydrogen) or D (deuterium) in an amount of 1×1018 cm−3 or more and 1×1022 cm or less; and a metal layer provided directly on the first SiC region. | ||
| 地址 | Minato-ku JP | ||