| 发明名称 |
Deep trench isolation |
| 摘要 |
An integrated semiconductor device includes a substrate of a first conductivity type, a buried layer located over the substrate, an isolated region located over a first portion of the buried layer, and an isolation trench located around the isolated region. A punch-through structure is located around at least a portion of the isolation trench. The punch-through structure includes a second portion of the buried layer, a first region located over the second portion of the buried layer, the first region having a second conductivity type, and a second region located over the first region, the second region having the first conductivity type. |
| 申请公布号 |
US9601564(B2) |
申请公布日期 |
2017.03.21 |
| 申请号 |
US201615132329 |
申请日期 |
2016.04.19 |
| 申请人 |
NXP USA, INC. |
发明人 |
Cheng Xu;Blomberg Daniel J.;Zhang Zhihong;Zuo Jiang-Kai |
| 分类号 |
H01L29/94;H01L29/06;H01L27/108;H01L21/761;H01L21/8238;H01L21/762;H01L29/66;H01L29/10;H01L21/8249;H01L21/8228;H01L21/763 |
主分类号 |
H01L29/94 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated semiconductor device, comprising:
a substrate of a first conductivity type; a buried layer located over the substrate; an isolated region located over a first portion of the buried layer; an isolation trench located around the isolated region; and a punch-through structure located around at least a portion of the isolation trench, the punch-through structure including:
a second portion of the buried layer,a first region located over the second portion of the buried layer, the first region having the first conductivity type, anda second region located over the first region, the second region having a second conductivity type. |
| 地址 |
Austin TX US |
