发明名称 Solid-state image capturing apparatus and camera
摘要 A solid-state image capturing apparatus, comprising a plurality of photoelectric conversion portions disposed in a first semiconductor region of a first conductivity type, a first portion of the first conductivity type disposed in the first semiconductor region and configured to supply a first potential to the first semiconductor region, and a second semiconductor region of a second conductivity type configured to receive a second potential, wherein the first portion is disposed between first and second photoelectric conversion portions neighboring each other, and the second semiconductor region is disposed between the first portion and each of the first and second photoelectric conversion portions.
申请公布号 US9601536(B2) 申请公布日期 2017.03.21
申请号 US201514610123 申请日期 2015.01.30
申请人 Canon Kabushiki Kaisha 发明人 Johnson Michiko
分类号 H01L27/146 主分类号 H01L27/146
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A solid-state image capturing apparatus comprising: a first semiconductor region of a first conductivity type provided in a substrate; a first photoelectric conversion portion and a second photoelectric portion, each disposed in the first semiconductor region, the first photoelectric conversion portion and the second photoelectric conversion portion being adjacent to each other; a first portion of the first conductivity type disposed in the first semiconductor region and configured to supply a first potential to the first semiconductor region; and two second semiconductor regions, in a cross sectional view including the first photoelectric conversion portion and the second photoelectric conversion portion, of a second conductivity type, each of the two second semiconductor regions configured to receive a second potential different from the first potential, wherein, in a planar view for an upper face of the substrate, the first portion is disposed between the first photoelectric conversion portion and the second photoelectric conversion portion, andone of the two second semiconductor regions is disposed between the first portion and the first photoelectric conversion portion and the other of the two second semiconductor regions is disposed between the first portion and the second photoelectric conversion portion.
地址 Tokyo JP