发明名称 Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
摘要 [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.
申请公布号 US9601350(B2) 申请公布日期 2017.03.21
申请号 US201213982697 申请日期 2012.01.30
申请人 BONDTECH CO., LTD.;TAIYO YUDEN CO., LTD.;LAN TECHNICAL SERVICE CO., LTD. 发明人 Suga Tadatomo;Yamauchi Akira;Kondou Ryuichi;Matsumoto Yoshiie
分类号 H01L21/322;B23K1/20;B23K20/24;H01L21/67;H01L21/762;H01L21/302;H01L21/02;H01L21/263;H01L29/04;H01L29/36;H01L21/20;H01J37/317 主分类号 H01L21/322
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A bonding substrate fabrication method for fabricating a substrate (“bonding substrate”) on which a bonding surface is formed, the bonding substrate fabrication method comprising: a first surface treatment step of surface-treating a surface of a substrate by irradiation with radiated particles including energetic particles; and a second surface treatment step of surface-treating the substrate surface by irradiation with radiated particles including metal particles; wherein the bonding substrate is fabricated as a result of implementing the first surface treatment step and second surface treatment step; and implementation of the first surface treatment step and the second surface treatment step is controlled so that the metal particles will be distributed in a base material of a surface layer of the bonding substrate, and the implementation is controlled without forming a metal layer on the surface of the bonding substrate.
地址 Kyoto JP