发明名称 |
Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly |
摘要 |
[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles. |
申请公布号 |
US9601350(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201213982697 |
申请日期 |
2012.01.30 |
申请人 |
BONDTECH CO., LTD.;TAIYO YUDEN CO., LTD.;LAN TECHNICAL SERVICE CO., LTD. |
发明人 |
Suga Tadatomo;Yamauchi Akira;Kondou Ryuichi;Matsumoto Yoshiie |
分类号 |
H01L21/322;B23K1/20;B23K20/24;H01L21/67;H01L21/762;H01L21/302;H01L21/02;H01L21/263;H01L29/04;H01L29/36;H01L21/20;H01J37/317 |
主分类号 |
H01L21/322 |
代理机构 |
Pearne & Gordon LLP |
代理人 |
Pearne & Gordon LLP |
主权项 |
1. A bonding substrate fabrication method for fabricating a substrate (“bonding substrate”) on which a bonding surface is formed, the bonding substrate fabrication method comprising:
a first surface treatment step of surface-treating a surface of a substrate by irradiation with radiated particles including energetic particles; and a second surface treatment step of surface-treating the substrate surface by irradiation with radiated particles including metal particles; wherein the bonding substrate is fabricated as a result of implementing the first surface treatment step and second surface treatment step; and implementation of the first surface treatment step and the second surface treatment step is controlled so that the metal particles will be distributed in a base material of a surface layer of the bonding substrate, and the implementation is controlled without forming a metal layer on the surface of the bonding substrate. |
地址 |
Kyoto JP |