Semiconductor device, display device, and method for producing semiconductor device

摘要

This semiconductor device (100) includes: a thin-film transistor (101); an interlevel insulating layer (14) including a first insulating layer (12); a first transparent conductive layer (15) formed on the interlevel insulating layer and having a first hole (15p); a dielectric layer (17) covering the side surface of the first transparent conductive layer closer to the first hole; and a second transparent conductive layer (19a) overlapping at least partially with the first transparent conductive layer via the dielectric layer, which has a second hole (17p). The first insulating layer has a third hole (12p). The interlevel insulating layer and dielectric layer have a first contact hole (CH1), the sidewall of which includes the side surfaces of the second and third holes (17p, 12p). At least a part of the side surface of the third hole is aligned with that of the second hole. The second transparent conductive layer contacts with the drain electrode in the first contact hole to form a contact portion (105), which at least partially overlaps with a gate line layer when viewed along a normal to a substrate.

主权项

1. A semiconductor device comprising:
a substrate and a thin-film transistor, a gate line layer, and a source line layer which are supported by the substrate, wherein the thin-film transistor includes a gate electrode, a gate insulating layer over the gate electrode, a semiconductor layer on the gate insulating layer, a source electrode, and a drain electrode, the gate line layer includes a gate line and the gate electrode, the source line layer includes a source line and the source and the drain electrodes, the semiconductor device further includes: an interlevel insulating layer which is over the source and the drain electrodes and which includes a first insulating layer that contacts at least with a surface of the drain electrode; a first transparent conductive layer which is on the interlevel insulating layer and includes a first hole; a dielectric layer which is on the first transparent conductive layer and which covers a side surface of the first hole of the first transparent conductive layer; and a second transparent conductive layer over the dielectric layer so as to overlap with at least a portion of the first transparent conductive layer with the dielectric layer interposed between them, the interlevel insulating layer further includes a second insulating layer between the first insulating layer and the first transparent conductive layer, the first insulating layer is an inorganic insulating layer and the second insulating layer is an organic insulating layer, the dielectric layer includes a second hole, the first insulating layer includes a third hole, and the second insulating layer includes a fourth hole, the interlevel insulating layer and the dielectric layer include a first contact hole, a sidewall of which includes respective side surfaces of the second, the third, and the fourth holes, the sidewall of the first contact hole includes a first portion in which the side surfaces of the second and the third holes are aligned with each other and a second portion in which the side surfaces of the third and the fourth holes are aligned with each other, the second transparent conductive layer contacts with the drain electrode inside the first contact hole to define a contact portion where the second transparent conductive layer and the drain electrode contact with each other, and when viewed along a normal to the substrate, at least a portion of the contact portion overlaps with the gate line layer.