发明名称 |
Method of fabricating sputtering target, sputtering target using the method, and method of manufacturing organic light-emitting display apparatus using the sputtering target |
摘要 |
A method of fabricating a sputtering target includes preparing a first powder material including at least one of a tin oxide and a mesh-forming oxide; mixing the first powder material and a second powder material comprising carbon or a tin oxide to prepare a mixture; simultaneously performing a primary compression and primary sintering on the mixture in a reduction atmosphere; and simultaneously performing a secondary compression and secondary sintering on the mixture in the reduction atmosphere to prepare the sputtering target. |
申请公布号 |
US9598764(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201414205624 |
申请日期 |
2014.03.12 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Shin Sang-Wook;Jung Sun-Young;Lee Il-Sang;Park Jin-Woo;Kim Dong-Jin |
分类号 |
C04B35/457;C23C14/34;C23C14/08;H01J37/34;H01L51/52 |
主分类号 |
C04B35/457 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP |
主权项 |
1. A method of fabricating a sputtering target, the method comprising:
preparing a first powder material comprising at least one of a tin oxide and Sn2P2O7; mixing the first powder material and a second powder material to prepare a mixture, wherein the second powder material comprises carbon or a tin oxide; simultaneously performing a primary compression and a primary heating on the mixture in a reduction atmosphere; and simultaneously performing a secondary compression and a secondary heating on the mixture in the reduction atmosphere to prepare the sputtering target, wherein the primary heating is performed at a temperature of about 100° C. to about 550° C. and the secondary heating is performed at a temperature of about 150° C. to about 450° C. |
地址 |
Gyeonggi-Do KR |