发明名称 |
Interconnect structure having subtractive etch feature and damascene feature |
摘要 |
Methods of forming an interconnect structure include depositing a first conductive material on a substrate. Aspects include subtractively etching the conductive material to form a patterned first conductive layer, and depositing a dielectric layer on interconnect structure. Aspects also include depositing a second conductive material on the dielectric layer and removing the second conductive material through the top of the second metal liner. |
申请公布号 |
US9601426(B1) |
申请公布日期 |
2017.03.21 |
申请号 |
US201615166570 |
申请日期 |
2016.05.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Bonilla Griselda;Choi Samuel S.;Filippi Ronald G.;Huang Elbert E.;Lustig Naftali E.;Simon Andrew H. |
分类号 |
H01L23/522;H01L23/528;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Meyers Steven |
主权项 |
1. An interconnect structure comprising:
a first insulator layer; a first dielectric layer on the first insulator layer; a subtractive etch feature comprising a first conductive material, the subtractive etch feature having a first subtractive etch vertical wall, a second subtractive etch vertical wall, and an angle between the first subtractive etch vertical wall and a horizontal plane that is less than 90 degrees; and a damascene feature comprising a second conductive material, the damascene feature having a first damascene vertical wall, a second damascene vertical wall, and an angle between the first damascene vertical wall and the horizontal plane that is greater than 90 degrees; wherein the first subtractive etch vertical wall is parallel to the second damascene vertical wall. |
地址 |
Armonk NY US |