Semiconductor device having elevated structure

摘要

A semiconductor device includes a gate stack overlying a substrate. The semiconductor device further includes a spacer on sidewalls of the gate stack, where a top surface of the spacer is above a top surface of the gate stack. Additionally, the semiconductor device includes a protection layer overlying the gate stack and filling at least a portion of a space surrounded by the spacer above the top surface of the gate stack. Furthermore, the semiconductor device includes a contact hole over the spacer, where the contact hole extends over the gate stack, and where a sidewall of the contact hole has a step-wise shape.

主权项

1. A semiconductor device comprising:
a gate stack overlying a substrate; a spacer on sidewalls of the gate stack, wherein a top surface of the spacer is above a top surface of the gate stack; a continuous protection layer overlying the gate stack and completely filling a space surrounded by the spacer above the top surface of the gate stack, wherein the continuous protection layer is in direct contact with the substrate; and a contact hole over the spacer, wherein the contact hole extends over the gate stack, and wherein a sidewall of the contact hole has a step-wise shape, wherein an outer surface of the spacer forms an interface with the contact hole.