Three-dimensional magnetic memory element

摘要

The disclosed technology relates to a magnetic memory device. In one aspect, the device includes a first electrode comprising a conductive pillar formed over the substrate and elongated in a vertical direction crossing a lateral surface of the substrate. The device additionally includes a second electrode extending in a lateral direction crossing the first direction, where the second electrode intersects the first electrode. The device additionally includes a magnetic tunnel junction (MTJ) formed at an intersection between the first electrode and the second electrode, where the MTJ continuously surrounds the first electrode. The MTJ includes a reference layer continuously surrounding the pillar of the first electrode, a free layer continuously surrounding the free layer, and a dielectric tunnel barrier interposed between the reference layer and the free layer.

主权项

1. A memory device, comprising:
a semiconductor substrate; a first electrode comprising a conductive pillar formed over the semiconductor substrate and elongated in a vertical direction, the vertical direction crossing a lateral surface of the semiconductor substrate; a second electrode forming a line extending in a lateral direction crossing the vertical direction, the second electrode intersecting the first electrode; and a magnetic tunnel junction (MTJ) formed at an intersection between the first electrode and the second electrode, the MTJ continuously surrounding the first electrode and comprising:
a reference layer continuously surrounding the conductive pillar of the first electrode,a free layer continuously surrounding the reference layer, anda dielectric tunnel barrier interposed between the reference layer and the free layer,wherein the MTJ is formed in a vertical opening formed within and through the second electrode such that the MTJ is surrounded by the second electrode, andwherein the MTJ is configured to radially tunnel spin-polarized electrons from the reference layer through the dielectric tunnel barrier to the free layer to cause a change in a magnetic orientation of the free layer.