发明名称 Touch panel device and method for manufacturing the same
摘要 A touch panel device is provided, having a cover plate, a first mask layer, a signal trace layer and a second mask layer. The cover plate has a visible area and a shield area at a side of the visible area. The shield area is divided into first, second area, third areas sequentially from the visible area to an edge of the shield area. The first mask layer disposed in the first and second areas of the shield area over a surface of the cover plate, wherein the first mask layer has a flat surface. The signal trace layer is disposed in the first area of the shield area over the flat surface. The second mask layer is at least disposed in the third area near the edge of the cover plate. A viscosity of the second mask layer is larger than a viscosity of the first mask layer.
申请公布号 US9600105(B2) 申请公布日期 2017.03.21
申请号 US201414181715 申请日期 2014.02.16
申请人 TPK Touch Solutions (Xiamen) Inc. 发明人 Lee Yuh-Wen;Ruan Keming;Chi Ho-Hsun;Lin Fengming;Xu Xianbin;Tang Chuandai
分类号 G02F1/1335;G06F3/041;G06F3/044 主分类号 G02F1/1335
代理机构 Cooper Legal Group, LLC 代理人 Cooper Legal Group, LLC
主权项 1. A touch panel device, comprising: a cover plate having a visible area and a shield area at a side of the visible area, wherein the shield area is divided into a first area, a second area, and a third area sequentially from the visible area; a first mask layer disposed in the first area of the shield area and the second area of the shield area, wherein the first mask layer has a top surface having a first region in the first area of the shield area and a second region in the second area of the shield area, and the second region of the top surface of the first mask layer has a morphing pattern that is different from a pattern of the first region of the top surface of the first mask layer; a signal trace layer disposed in the first area of the shield area over on the first region of the top surface of the first mask layer; and a second mask layer at least disposed in the third area of the shield area and the second area of the shield area to overlie the morphing pattern, wherein a viscosity of the second mask layer is larger than a viscosity of the first mask layer.
地址 Xiamen CN