Semiconductor memory device, method of performing a refresh for semiconductor memory device and refresh counter in semiconductor memory device

摘要

A semiconductor memory device may include a memory cell array, a first decoder and a second decoder. The memory cell array includes a plurality of memory cell rows. The first decoder is configured to select a first number of memory cell rows of the plurality of memory cell rows based on a selected refresh row address of a set of row addresses. The second decoder is configured to select a second number of memory cell rows of the plurality of memory cell rows based on the selected refresh row address. A total number of the first number and the second number is varied in response to the selected refresh row address.

主权项

1. A semiconductor memory device, comprising:
a memory cell array comprising a plurality of memory cell rows; a first decoder configured to perform a refresh on a first number of memory cell rows of the plurality of memory cell rows based on a selected refresh row address of a set of refresh row addresses; and a second decoder configured to perform a refresh on a second number of memory cell rows of the plurality of memory cell rows based on the selected refresh row address, wherein a total number of the first number of rows and the second number of rows is varied in response to the selected refresh row address.