发明名称 |
Fabrication of a scintillator material of elpasolite type |
摘要 |
A process for fabricating a crystalline scintillator material with an elpasolite structure that has a theoretical composition of A2BC(1-y)MyX(6-y) can include conducting crystallization by cooling from a melt bath including r moles of A and s moles of B. A is chosen from Cs, Rb, K, and Na. B is chosen from Li, K, and Na. C is chosen from athe rare earth elements, Al, and Ga. M is chosen from the alkaline earth elements. X is chosen from F, Cl, Br, and I, and y represents the atomic fraction of substitution of C by M and is in the range extending from 0 to 0.05. The melt bath can be in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. The crystals formed therefrom can have improved scintillation properties. |
申请公布号 |
US9599727(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201514879650 |
申请日期 |
2015.10.09 |
申请人 |
SAINT-GOBAIN CRISTAUX ET DETECTEURS |
发明人 |
Ouspenski Vladimir;Blahuta Samuel;Huchet Raphael;Lejay Julien |
分类号 |
H05B33/00;G01T1/202;C30B11/00;C30B15/00;C30B29/12;C09K11/77;C30B11/02;C30B11/04;C30B15/04 |
主分类号 |
H05B33/00 |
代理机构 |
Abel Law Group, LLP |
代理人 |
Abel Law Group, LLP |
主权项 |
1. A process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y), comprising conducting crystallization by cooling from a melt bath comprising r moles of A and s moles of B,
wherein:
A is chosen from among Cs, Rb, K, Na;B is chosen from among Li, K, Na and comprises Li;C is chosen from among the rare earths, Al, and Ga;M is chosen from among the alkaline earths; andX is chosen from among F, Cl, Br, and I and comprises Cl or Br or I, y representing an atomic fraction of substitution of C by M and being in a range extending from 0 to 0.05; wherein the crystalline scintillator material is doped with an element activating scintillation; wherein the melt bath in contact with the material contains A and B in such a way that 2s/r is above 1; and wherein a first two-thirds in volume of growth of the crystalline material comprises less than 10% in volume of a phase different to that of the elpasolite. |
地址 |
Courbevoie FR |