High speed clock cycle rate digital voltage monitor with triggered tracing for integrated circuits

摘要

Implementations of the present disclosure involve a system and/or method for measuring on-die voltage levels of an integrated circuit through a digital sampling circuit. In particular, the system and/or method utilizes a delay line based analog-to-digital sampling circuit that produces a voltage reading over time, such as at every high frequency clock cycle. The digitized samples are routed to either an on-die memory structure for later analysis or are transmitted to one or more pins of a chip for capture and analysis by an external analyzer.

主权项

1. A method for measuring a voltage level in an integrated circuit, the method comprising:
tuning a voltage monitor circuit by programming a coarse delay device in electrical communication with the voltage monitor circuit, the coarse delay device configured to delay a transmission of a waveform through the voltage monitor circuit based on a programmed value received at the coarse delay device; receiving a first N-bit output value corresponding to a first power supply voltage measurement from the voltage monitor circuit, the first N-bit output value comprising a plurality of un-asserted bits and one asserted bit where a bit position of the one asserted bit of the first N-bit output value indicates a relative voltage measurement of the voltage monitor circuit; receiving an N-bit trigger value corresponding to a pre-determined voltage measurement threshold value, the N-bit trigger value comprising a first plurality of asserted bit positions defining an upper voltage level and a second plurality of asserted bit position defining a lower voltage level; comparing the N-bit trigger value to the first N-bit output value, the comparison configured to detect whether the bit position of the one asserted bit of the first N-bit output value corresponds to one of the first plurality of asserted bit positions defining the upper voltage level or the second plurality of asserted bit position defining the lower voltage level; generating a trigger signal wherein the bit position of the one asserted bit of the first N-bit output value corresponds to one of the first plurality of asserted bit positions defining the upper voltage level or the second plurality of asserted bit position defining the lower voltage level; transmitting the trigger signal to a memory device comprising a plurality of storage locations, the trigger signal activating the memory device to begin storing a plurality of N-bit output values; and storing each of the plurality of N-bit output values in the plurality of storage locations of the memory device corresponding to a plurality of power supply voltage measurements measured over a period of time and occurring after receiving the first N-bit output value in the memory device until the plurality of storage locations of the memory device are full.