Ion sensor

摘要

The disclosure describes techniques for determining an ion concentration in a sample. According to these techniques of this disclosure, an ion concentration of a sample is determined based on detecting at least one change in an electrical characteristic of a semiconductor device due to a gate insulation layer of the semiconductor device placed in contact with the sample.

主权项

1. An apparatus for determining an ion concentration in a sample, comprising:
a semiconductor body; a gate electrode; a gate insulation arranged between the gate electrode and at least a portion of the semiconductor body, wherein the gate insulation comprises at least one ion access area providing access for ions in the sample to the insulating layer, wherein the gate electrode is in direct contact with the gate insulation, wherein the gate electrode is embedded in the gate insulation so that a top surface of the gate electrode and a top surface of the gate insulation are coplanar.