| 发明名称 | Memory device | ||
| 摘要 | According to one embodiment, a memory device includes a plug, a variable resistance film provided on the plug, and an electrode provided on the variable resistance film. The variable resistance film includes, a first portion having a superlattice structure, and a second portion having an amorphous structure. | ||
| 申请公布号 | US9601689(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201514601365 | 申请日期 | 2015.01.21 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Yamamoto Kazuhiko |
| 分类号 | H01L45/00 | 主分类号 | H01L45/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A memory device, comprising: a plug; a variable resistance film provided on the plug; and an electrode provided on the variable resistance film, the variable resistance film including: a first portion having a superlattice structure; anda second portion having an amorphous structure, the plug includes: an insulating member; anda conductive member provided on a bottom surface of the insulating member and on a side surface of the insulating member,the first portion contacts with at least a part of the conductive member. | ||
| 地址 | Minato-ku JP | ||