Semiconductor light-emitting element and method of manufacturing the same

摘要

A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.

主权项

1. A method of manufacturing a semiconductor light-emitting element including a semiconductor structure layer having a hexagonal crystal structure, the method comprising:
forming, on a C− plane of the semiconductor structure layer, easily-to-be-etched portions which are arranged discretely based on crystal directions on the C− plane of the semiconductor structure layer; and subjecting the C− plane of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from the crystal structure of the semiconductor structure layer on the C− plane of the semiconductor structure layer, wherein: when the C− plane is subdivided in a mesh form, including equilateral-triangular lattices, by a first straight line group including a plurality of straight lines arranged in parallel with a [11-20] direction, from among the crystal directions on the C− plane of the semiconductor structure layer, and at regular intervals, a second straight line group including a plurality of straight lines arranged in parallel with a [2-1-10] direction and at the same intervals as the first straight line group, and a third straight line group including a plurality of straight lines arranged in parallel with a [1-210] direction and at the same intervals as the first and second straight line groups, the easily-to-be-etched portions are formed at respective centers of the equilateral-triangular lattices, and each of the easily-to-be-etched portions has a larger rate of the wet etching than a rate of the wet etching of remaining portions of the C− plane.