| 发明名称 | Semiconductor device including fin structure with two channel layers and manufacturing method thereof | ||
| 摘要 | A semiconductor device includes a fin structure protruding from a substrate and having a top face and a first side face and a second side face opposite to the first side face, and first semiconductor layers disposed over the first and second side faces of the fin structure. A thickness in a vertical direction of the first semiconductor layers is smaller than a height of the fin structure. | ||
| 申请公布号 | US9601626(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201514604537 | 申请日期 | 2015.01.23 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Lee Tung Ying;Okuno Yasutoshi;Su Chien-Chang;Huang Wang-Chun |
| 分类号 | H01L27/088;H01L29/78;H01L29/165;H01L29/10;H01L29/66;H01L21/02 | 主分类号 | H01L27/088 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A semiconductor device, comprising: a fin structure protruding from a substrate in a vertical direction and having a top face and a first side face and a second side face opposite to the first side face; first semiconductor layers disposed over the first and second side faces of the fin structure; a gate electrode covering the top fade and the first and second side faces of the fin structure and covering the first semiconductor layers; and an insulating layer interposed between the gate electrode and the fin structure and between the gate electrode and the first semiconductor layers, wherein a thickness in the vertical direction of the first semiconductor layers is smaller than a height of the fin structure. | ||
| 地址 | Hsinchu TW | ||