| 发明名称 | Integrated circuit heat dissipation using nanostructures | ||
| 摘要 | An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer. | ||
| 申请公布号 | US9601606(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201614990941 | 申请日期 | 2016.01.08 |
| 申请人 | International Business Machines Corporation | 发明人 | Botula Alan B.;Lifson Max L.;Slinkman James A.;Van Kessel Theodore G.;Wolf Randy L. |
| 分类号 | H01L29/08;H01L29/732;H01L23/367;H01L23/373;H01L29/78;H01L29/45;H01L23/525;H01L21/02;H01L21/285;H01L21/762;H01L49/02;H01L29/06;H01L29/10;B82Y10/00;H01L29/417;H01L29/41;H01L21/48;H01L23/48;H01L23/485 | 主分类号 | H01L29/08 |
| 代理机构 | Roberts, Mlotkowski, Safran, Cole & Calderon, P.C. | 代理人 | Meyers Steven;Calderon Andrew M.;Roberts, Mlotkowski, Safran, Cole & Calderon, P.C. |
| 主权项 | 1. A method of manufacturing a semiconductor structure, comprising: forming an isolation layer on an electrically conductive feature of an integrated circuit device, wherein the isolation layer is electrically insulating and thermally conducting; forming an electrically conductive layer on the isolation layer; forming a plurality of nanowire structures on a surface of the electrically conductive layer by applying an electric potential to the electrically conductive layer through a wiring path; forming a discontinuity in the wiring path after the plurality of nanowire structures are formed; forming an insulator layer on and around the plurality of nanowire structures; and forming an electrical contact of the integrated circuit device in the insulator layer. | ||
| 地址 | Armonk NY US | ||